收藏本站
DMP58D0SV
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Please click here to visit our online spice models database.
Features
Mechanical Data
?
?
?
?
?
?
?
Low On-Resistance
ESD Protected Gate to 500V
Low Input Capacitance
Fast Switching Speed
Lead Free By Design/RoHS Compliant (Note 3)
“Green” Device (Note 4)
Qualified to AEC-Q 101 Standards for High Reliability
?
?
?
?
?
?
?
?
Case: SOT-563
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish ? Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
SOT-563
D 2
S 2
G 1
G 2
S 1
D 1
ESD protected to 500V
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Symbol
V DSS
V DGR
Value
-50
-50
Units
V
V
Gate-Source Voltage
Drain Current (Note 2)
Continuous
Continuous
V GSS
I D
± 20
-160
V
mA
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
400
313
-55 to +150
Units
mW
° C/W
° C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV DSS
I DSS
I GSS
-50
?
?
?
?
?
?
-1
± 5
V
μ A
μ A
V GS = 0V, I D = -250 μ A
V DS = -50V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V GS(th)
R DS (ON)
g FS
-0.8
?
0.05
?
6
?
-2.1
8
?
V
Ω
S
V DS = V GS , I D = -250 μ A
V GS = -5V, I D = -0.100A
V DS = -25V, I D = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
27
?
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
?
?
4
1.4
?
?
pF
pF
V DS = -25V, V GS = 0V, f = 1.0MHz
Notes:
1. R GS ≤ 20K Ω .
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
4. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
DMP58D0SV
Document number: DS31293 Rev. 4 - 2
1 of 5
www.diodes.com
July 2009
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMS2120LFWB-7 MOSFET P-CH 20V 2.9A 8DFN
DMS2220LFDB-7 MOSFET P-CH 20V 3.5A 6-DFN
DMS2220LFW-7 MOSFET P-CH 20V 2.9A 8-DFN
DMS3012SFG-7 MOSFET N CH 30V POWERDI 3333-8
DMS3014SFG-7 MOSF N CH 30V 9.5A POWERDI3333-8
DMS3014SSS-13 MOSFET N-CH 30V 11A SO8
DMS3015SSS-13 MOSFET N-CH 30V 11A SO8
DMS3016SFG-13 MOSFET N-CH 30V 7A PWRDI3333-8
相关代理商/技术参数
DMP6101A 功能描述:固态继电器-PCB安装 Input Mod., 5Vdc, 4-32Vdc In RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT
DMP6180SK3-13 制造商:Diodes Incorporated 功能描述:MOSF P CH 60V 14A TO252 制造商:Diodes Incorporated 功能描述:60V P-CH MOSFET
DMP6185SK3-13 功能描述:MOSFET P-CH 60V 9.4A T0252 制造商:diodes incorporated 系列:- 包装:剪切带（CT） 零件状态:在售 FET 类型:P 沟道 技术:MOSFET（金属氧化物） 漏源电压（Vdss）:60V 电流 - 连续漏极（Id）（25°C 时）:9.4A（Tc） 驱动电压（最大 Rds On，最小 Rds On）:4.5V，10V 不同 Id 时的 Vgs（th）（最大值）:3V @ 250μA 不同 Vgs 时的栅极电荷?（Qg）（最大值）:14nC @ 10V Vgs（最大值）:±20V 不同 Vds 时的输入电容（Ciss）（最大值）:708pF @ 30V FET 功能:- 功率耗散（最大值）:1.6W（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:150 毫欧 @ 12A，10V 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 供应商器件封装:TO-252 封装/外壳:TO-252-3，DPak（2 引线 + 接片），SC-63 基本零件编号:DMP6185 标准包装:1
DMP6201A 功能描述:固态继电器-PCB安装 Input Mod., 5Vdc, 90-140Vac In RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT
DMP6202A 功能描述:固态继电器-PCB安装 Input Mod., 5Vdc, 180-280Vac In RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT
DMP6301A 功能描述:固态继电器-PCB安装 DMP I/O Module SMT 3-6 VDC RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT
DMP6301A-MS11 制造商:Crydom 功能描述:
DMP6402A 功能描述:固态继电器-PCB安装 Output Mod., 280Va c/3A, 5Vdc In RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT